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EE948 Advanced Topics in Microwave Engineering

Campus

PNEC

Programs

PG

Session

Fall Semester 2016

Course Title

Advanced Topics in Microwave Engineering

Course Code

EE948

Credit Hours

30

PreRequisutes

UG level courses including Microwave Engineering, Electronics, Wave
propagation and antenna design

Course Objectives

The course is intended to provide indepth and detailed knowledge in Microwave Engineering required for students of EE with majors in Communication Engineering. The course comprises of following modules;A. RF Analysis, Measurements, Microwave circuit design (MCD) and MMIC: To Develop a detailed understanding about the advanced analysis techniques for RF and microwave network analysis. Existing and advanced systems will also be studied, and where possible practical applications in present and future communication receivers will be studied. Basic measurement systems will also be covered. B. Nanotechnology: To prepare for the next generation of electronic devices, this module teaches the theory of current, voltage and resistance from atoms up. To describe electrons at the nanoscale, an introduction to the principles of quantum mechanics, including quantization, the waveparticle duality, wave functions and Schrödinger's equation would be covered. Then the electronic properties of molecules, carbon nanotubes and crystals, including energy band formation and the origin of metals, insulators and semiconductors would be deliberated. C. Ultra High Speed Microwave Devices (12 hours): High speed semiconductor devices unit provides a comprehensive overview of all aspects of monolithic Microwave Integrated Circuits(MMICs) from active and passive components to the fabrication technology.D. Diode Detectors, Mixers and Oscillators The module will focus on nonlinear circuit
elements and will give indepth analysis of state of the art devices.E. Solar Cells This module will give extensive exposure of underlying physical phenomenaand principles of normal Silicon based and compound semiconductor based highefficiency multijunction solar cells.

Detail Content

RF Analysis and Measurements Quick review of Transmission theory modelling with discrete artificial lines, the Smith Chart,ABCD parameters and Sparameters, VSWR and reflection coefficient, Circuit analysis of lumpedRF and distributed microwave components, Analysis of lossless reciprocal networks, Unitarycondition, Worked examplessimple matching networks quarterwave and lumped LC.•The basics of scalar and vector network analysers
MCDMicrowave systems and components  Overview of high speed electronic devices.Basic operationof the FET.Equivalent circuit models versus  Sparameters.Gain definitions, compression, distortion, 1dB compression point.Stability, Rollett stability factor, stability circles and stable regions.Constant gain circlesOrigin of noise & noise parameters of amplifiers. Noise figure and temperature.Maximum gain amplifier design.Constant gain amplifier design.Low noise amplifier (LNA)design.PIN modulators and switches.Schottky diodes and mixers.Negative resistance.Oscillator design.VCOs.
MMICs Review of MMICs technology with advantages and disadvantages of MMICs, cost anderformance, Major MMIC manufacturesTransistor Technologies (BJTs, HBTs, MESFETs and HEMTs) Principal operation and biasing conditionsLinear circuit models and extraction techniques Small and large signal circuit models DC, RF, Noise and Power Characteristics Gain compression and Efficiency Distortion and linearity characteristics Passive components including capacitors, Inductors and Resistors Transmission lines, coplanar waveguides and microstrip Review of GaAs MMIC fabrication process, Yield and process controlB. Nanotechnology:The motivation for nanoelectronics, device scaling, Review of waves, phase and interference,wavefunctions, Wavepackets and operators, Fourier transforms, Wavepacket propagation,Momentum, energy and the uncertainty principle, Schrödinger equation, particle in a box, Bra andket notation, Dispersion relations, Piecewise potentials, tunneling, The Quantum Particle in a Box,Fermi statistics, current, metals and insulators, Definition of group velocity and dispersion relation,Fermi statistics, Density of states, periodic boundary conditions, Density of states in 0d to 3dstructures, Review of densities of states (DOS), Review DOS, DOS in disordered materialsC. Ultra High Speed Microwave Devices (12 hours):
CMOS scaling, challenges and limits, static power, device variability, interconnect; ITRS; Bulk CMOSimprovements: strained Si, highK dielectrics, metal gates, SOI; Novel device architectures. CompoundSemiconductors Ultra High speed electronic devices and circuits: FET, HEMT, pHEMT and HBTs.Circuits: pHEMT and HBT equivalent circuits, frequency dispersion, short channel effects. GaAs andInP Integrated Circuits; Monolithic Microwave Integrated Circuits (MMIC); High Speed AnalogueDesign; Differential Amplifiers, cascode techniques, Direct Coupled Amplifiers; High SpeedOperational Amplifiers and Analogue to Digital Converters (ADC); Low Noise Amplifiers; Transferredelectronic devices: Gunn devices.D. Diode Detectors, Mixers and OscillatorsDiode IV characteristics, Diode Power Detectors, Diode Mixers, Balanced Mixers, Intermodulationproducts, One port negative resistance oscillators, Transistor oscillators, DRO, Tunable Oscilator.E. Solar CellsOverview of the stateoftheart of solar cells, solar spectrum and fundamental concepts ofphotovoltaics. Overview of energy band diagram models of homo and heterojunctions. Carriertransport in semiconductors including carrrier generation and recombination (RG) processes. Sibasedsolar cells—analysis of homojunction solar cells, basic overview of numerical approach.Multijunction solar cells— overview of high efficiency solar cells, device physics of compoundsemiconductors, analysis and design of multijunction solar cells.
f. Laboratories as Assignment using ADS and Silvacosoftwares Four to five labs using ADS and Silvacosoftwares would be covered which would supplement thetheoretical conceots studied during five aforesaid modules. The labs comprises of following;1. ADS lab  Power divider and Combiners – Ideal Transmission Line Divider and Microstrip Divider2.ADS Lab  Microwave Transistor Amplifier3.Silvaco introduction and pHEMT laboratory.4. Silicon Solar Cell designing Silvaco Laboratory

Text/Ref Books

 David M Pozar, Microwave Engineering, John Wiley
 F.A Benson, T.M.Benson, Fields, Waves and Transmission Lines, Chapman and Hall
 MMIC design (edited by ID Robertson), IEE circuits and systems series 7
 Samuel Y. Liao, “Microwave Devices and Circuits”, PHI, 2003.
 Semiconductor devicesphysics and technology, S. M Sze, John Wiley & Sons
 Gallium Arsenide – Materials, devices and circuits, (edited by M J Howes and D V Morgan), John
Wiley & Sons
 Microwave Fieldeffect Transistors – theory, design and applications (R S Pengelly), Research
studies press and John Wiley & Sons
 S Fonash. Solar Cell Device Physics— 2nd edition (2010)
 Research Papers and weblinks will be provided during the course

Time Schedule

Fall Semester 2014

Faculty/Resource Person

Dr Faisal Amir,
PhD Electrical Engineering (High Speed Semiconductor Devices)
University of Manchester, UK
DrSajidSaleem,
PhD EE(Supper conducting Nano Electronics)
University College London, UK

