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EE-838 Semiconductor Device Physics
Campus
College of E&ME
Programs
PG
Session
Fall Semester 2016
Course Title
Semiconductor Device Physics
Course Code
EE-838
Credit Hours
3-0
Pre-Requisutes
Nil
Course Objectives
The objective of this graduate-level course is to provide an in-depth coverage of the semiconductor device physics. It is also serves to prepare the students to undertake research and development related to semiconductor devices.
Detail Content
Physics and Properties of Semiconductors – A Review
Crystal Structure of Silicon and GaAs
Band Theory
Electrical Transport Phenomenon
P-N Junctions
Depletion Region
Current-Voltage Characteristics
Heterojunctions
Metal Semiconductor Contacts
Formation of Barrier
Current Transport Processes
Ohmic Contact
Metal-Insulator-Semiconductor Capacitors
Text/Ref Books
Text Books
Donald A. Neamen, “Semiconductor Physics and Devices Basic Principles”, 3rd Edition, McGraw-Hill, 2003.
Ben G. Streetman & Sanjay Kumar Banerjee, “Solid State Electronic Devices”, 5th/6th Edition, Prentice-Hall, 2009.
Reference Books
S. M. Sze, & Kwok K. Ng, “Physics of Semiconductor Devices”, 3rd Edition, John Wiley & Sons, 2007.
Michael Shur, “Physics of Semiconductor Devices”, Prentice Hall, 1990.
Time Schedule
Fall 2015
Faculty/Resource Person
Dr. Mashhood Ahmed
PhD (Quaid-i-Azam University)
Discipline: Electronics
Specialization: Quantum Optics