National University of Sciences and Technology
Home | Back
EE-838 Semiconductor Device Physics
Campus College of E&ME
Programs PG
Session Fall Semester 2016
Course Title Semiconductor Device Physics
Course Code EE-838
Credit Hours 3-0
Pre-Requisutes Nil
Course Objectives The objective of this graduate-level course is to provide an in-depth coverage of the semiconductor device physics. It is also serves to prepare the students to undertake research and development related to semiconductor devices.
Detail Content
  • Physics and Properties of Semiconductors – A Review
  • Crystal Structure of Silicon and GaAs
  • Band Theory
  • Electrical Transport Phenomenon
  • P-N Junctions
    • Depletion Region
    • Current-Voltage Characteristics
    • Heterojunctions
  • Metal Semiconductor Contacts
    • Formation of Barrier
    • Current Transport Processes
    • Ohmic Contact
  • Metal-Insulator-Semiconductor Capacitors
Text/Ref Books Text Books
  • Donald A. Neamen, “Semiconductor Physics and Devices Basic Principles”, 3rd Edition, McGraw-Hill, 2003.
  • Ben G. Streetman & Sanjay Kumar Banerjee, “Solid State Electronic Devices”, 5th/6th Edition, Prentice-Hall, 2009.

Reference Books
  • S. M. Sze, & Kwok K. Ng, “Physics of Semiconductor Devices”, 3rd Edition, John Wiley & Sons, 2007.
  • Michael Shur, “Physics of Semiconductor Devices”, Prentice Hall, 1990.
Time Schedule Fall 2015
Faculty/Resource Person Dr. Mashhood Ahmed
PhD (Quaid-i-Azam University)
Discipline: Electronics
Specialization: Quantum Optics